Electronic transport in Si:P $\ensuremath{\delta}$-doped wires

Electronic transport in Si:P $δ$ -doped wires

J. S. Smith, D. W. Drumm, A. Budi, J. A. Vaitkus, J. H. Cole, and S. P. Russo

Phys. Rev. B 92, 235420 – Published 11 December 2015

Abstract

Despite the importance of Si:P $δ$ -doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a $δ$ -doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of $δ$ -doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of $δ$ -doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a $δ$ -doped wire, which we find to be at least 4.6 nm.

4 More

Received 15 July 2015
Revised 23 October 2015

DOI:https://doi.org/10.1103/PhysRevB.92.235420

Authors & Affiliations

J. S. Smith^1,*, D. W. Drumm^1,2, A. Budi³, J. A. Vaitkus¹, J. H. Cole^1,†, and S. P. Russo^1,‡

¹Chemical and Quantum Physics, School of Applied Sciences, RMIT University, Melbourne, Victoria 3001, Australia
²Australian Research Council Centre of Excellence for Nanoscale BioPhotonics, School of Applied Sciences, RMIT University, Melbourne, Victoria 3001, Australia
³NanoGeoScience, Nano-Science Center, Department of Chemistry, University of Copenhagen, Universitetsparken 5, 2100 København Ø, Denmark

^*jacksonsmith@tcqp.science
^†jared.cole@rmit.edu.au
^‡salvy.russo@rmit.edu.au

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand

Issue

Vol. 92, Iss. 23 — 15 December 2015

Reuse & Permissions

Access Options

Author publication services for translation and copyediting assistance advertisement

Physical Review B

covering condensed matter and materials physics

Electronic transport in Si:P $δ$ -doped wires

J. S. Smith, D. W. Drumm, A. Budi, J. A. Vaitkus, J. H. Cole, and S. P. Russo

Phys. Rev. B 92, 235420 – Published 11 December 2015

Abstract

Authors & Affiliations

Article Text (Subscription Required)

References (Subscription Required)

Issue

Access Options

Physical Review B

covering condensed matter and materials physics

Electronic transport in Si:P δ-doped wires

J. S. Smith, D. W. Drumm, A. Budi, J. A. Vaitkus, J. H. Cole, and S. P. Russo

Phys. Rev. B 92, 235420 – Published 11 December 2015

Abstract

Authors & Affiliations

Article Text (Subscription Required)

References (Subscription Required)

Issue

Access Options

Authorization Required

Other Options

Download & Share

Images

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Log In

Search

Article Lookup

Paste a citation or DOI

Enter a citation

Electronic transport in Si:P $δ$ -doped wires