Abstract
Recent breakthroughs in single-atom fabrication in silicon have brought the exciting prospect of monolayer-based nanoelectronics and theoretical understanding of such systems into sharp focus. Of particular interest is the effect of such sharp two-dimensional Coulomb array confinement on electronic properties of these donor-based semiconducting systems such as valley splitting, which is critical to quantum electronic applications. In this paper we apply ab initio techniques to these high-density donor systems specifically in order to investigate the approach to monolayer confinement. An optimized basis set is developed for Si:P and validated against our previous work on single -doped layers. A systematic study is then conducted wherein the effect of multiple adjacent phosphorus layers on the electronic properties of the material is explored. We find nonmonotonic electronic behavior as we approach the monolayer confinement limit, with potentially far-reaching implications for large-scale fabrication techniques.
- Received 22 April 2012
DOI:https://doi.org/10.1103/PhysRevB.86.165123
©2012 American Physical Society