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Direct visualization of charge distributions during femtosecond laser ablation of a Si (100) surface

Christoph T. Hebeisen, Germán Sciaini, Maher Harb, Ralph Ernstorfer, Sergei G. Kruglik, and R. J. Dwayne Miller
Phys. Rev. B 78, 081403(R) – Published 14 August 2008

Abstract

We directly observe the charge distributions and resulting electric fields present during the earliest stages of laser ablation of a Si (100) surface by using femtosecond electron pulses as a probe. We find the magnitude of the field to be 3.5×106V/m just 3 ps after an excitation pulse of 5.6J/cm2. By fitting the data to a simple model, we determine that the excitation results in the rapid emission of 5.3×1011electrons/cm2. These experiments provide new insights into the nature of the ablation process and the behavior of charged particles involved in it.

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  • Received 8 May 2008

DOI:https://doi.org/10.1103/PhysRevB.78.081403

©2008 American Physical Society

Authors & Affiliations

Christoph T. Hebeisen, Germán Sciaini, Maher Harb, Ralph Ernstorfer, Sergei G. Kruglik, and R. J. Dwayne Miller*

  • Institute for Optical Sciences and Departments of Chemistry and Physics, University of Toronto, 80 St. George Street, Toronto, Ontario M5S 3H6, Canada

  • *dmiller@lphys.chem.utoronto.ca

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Issue

Vol. 78, Iss. 8 — 15 August 2008

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