Photon emission from hot electrons in silicon

S. Villa, A. L. Lacaita, and A. Pacelli
Phys. Rev. B 52, 10993 – Published 15 October 1995
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Abstract

In this work we present a theoretical calculation of the photon emission spectrum via direct and phonon-assisted intra-conduction-band transitions, assessing the impact of the approximations usually made in theoretical analysis of the phenomenon. We have compared our results to a previous work, finding a marked disagreement. Our phonon-assisted emission spectrum has a much lower effective temperature, so that it overwhelms the contribution of direct processes over the range of photon energies spanning from infrared to near-UV. We discuss qualitative arguments supporting our results presenting also a simplified model suitable for a much more efficient implementation of the spectrum calculation.

  • Received 31 May 1995

DOI:https://doi.org/10.1103/PhysRevB.52.10993

©1995 American Physical Society

Authors & Affiliations

S. Villa, A. L. Lacaita, and A. Pacelli

  • Politecnico di Milano, Dipartimento di Elettronica e Informazione Centro di Elettronica Quantistica e Strumentazione Elettronica, Consiglio Nazionale delle Ricerche, Piazza L. da Vinci 32, 20133 Milano, Italy

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Vol. 52, Iss. 15 — 15 October 1995

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