Issue 2, 2016

Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy

Abstract

The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to ∼270 nm, and defect formation is not observed until very high He implantation doses.

Graphical abstract: Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy

Supplementary files

Article information

Article type
Communication
Submitted
25 Sep 2015
Accepted
28 Nov 2015
First published
30 Nov 2015

Nanoscale, 2016,8, 762-765

Author version available

Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy

W. Liu, L. Cheng, X. Li and Y. Wang, Nanoscale, 2016, 8, 762 DOI: 10.1039/C5NR06659J

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