摘要
二维六方氮化硼是一种理想的石墨烯电学器件介电层材料, 然而, 制备低成本和高质量的氮化硼材料仍是一个挑战. 本文使用等离子体化学气相沉积法, 500°C下在铜箔衬底上制备了三角形的BN晶畴及其薄膜. 通过使用锡箔纸包裹原料的方法避免了残留原料在BN表面的沉积. 当BN作为石墨烯场效应晶体管的介电层时, 基于石墨烯的场效应器件空穴与电子的迁移率分别为10500和4750 cm2 V‒1 s‒1, 明显优于在高温条件下制备的BN作为介电层的石墨烯器件, 间接表明了该方法可得到高质量的BN. 另外, 本工作也揭示了氮化硼的质量对石墨烯场效应器件的性能至关重要.
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Acknowledgements
This work was supported by the National Basic Research Program of China (2016YFA0200101), the National Natural Science Foundation of China (21633012 and 61890940), Beijing Municipal Science & Technology Commission (Z161100002116025), Chinese Academy of Sciences, the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB30000000 and XDB12030100) and Beijing National Laboratory for Molecular Sciences (BNLMS).
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Lifeng Wang received his BE degree from Nanjing Tech University in 2011. He obtained his PhD degree from Harbin Institute of Technology in 2016 under the direction of Prof. Yunqi Liu (ICCAS) and Prof. PingAn Hu. Currently, he is a postdoctoral research fellow at Deakin University. His research interests focus on the preparation and application of 2D materials in their electrical devices and energy storage and conversation.
Bin Wu obtained his BSc degree in 1994 from Inner Mongolia University, China and his PhD degree in physical chemistry from Peking University in 2002. He joined the ICCAS as an associate professor in 2008 after doing postdoctoral research for several years. Now he is a professor at ICCAS. His research interests include the controlled growth of 2D materials and their electronic applications.
PingAn Hu is a professor at Harbin Institute of Technology (HIT). He obtained his PhD degree from ICCAS. He got New Century Excellent Talents in University of China in 2010 and Longjiang Special Professorship in 2011. He published more than 100 SCI papers in highly qualified international journals.
Yunqi Liu is a professor at ICCAS. He graduated from Nanjing University in 1975, and received a doctorate from Tokyo Institute of Technology, Japan, in 1991. He was selected as an Academician of CAS in 2015, and a member of The World Academy of Sciences in 2018. His research interests include molecular materials and devices, the synthesis and applications of carbon nanomaterials, and organic electronics. He has published more than 600 peer reviewed papers with over 30,000 citations.
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Low Temperature Growth of Clean Single Layer Hexagonal Boron Nitride Flakes and Film for Graphene-Based Field-Effect Transistors
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Wang, L., Wu, B., Liu, H. et al. Low temperature growth of clean single layer hexagonal boron nitride flakes and film for graphene-based field-effect transistors. Sci. China Mater. 62, 1218–1225 (2019). https://doi.org/10.1007/s40843-019-9419-0
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DOI: https://doi.org/10.1007/s40843-019-9419-0