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Optical properties of laterally aligned Si nanowires for transparent electronics applications

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Abstract

We have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of ∼90% for a NW density of ∼20–25 per 10 μm. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%–95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics.

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Authors and Affiliations

  1. Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, Korea

    Dong Hyun Lee, Jaeseok Yi, Won Woo Lee, Ungyu Paik & Won Il Park

  2. Department of Energy Engineering, Hanyang University, Seoul, 133-791, Korea

    Ungyu Paik

  3. Department of Materials Science and Engineering, Department of Chemistry, Department of Mechanical Science and Engineering, Beckman Institute, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA

    John A. Rogers

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  1. Dong Hyun Lee
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  2. Jaeseok Yi
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  3. Won Woo Lee
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  4. Ungyu Paik
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  5. John A. Rogers
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  6. Won Il Park
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Correspondence to Ungyu Paik, John A. Rogers or Won Il Park.

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Lee, D.H., Yi, J., Lee, W.W. et al. Optical properties of laterally aligned Si nanowires for transparent electronics applications. Nano Res. 4, 817–823 (2011). https://doi.org/10.1007/s12274-011-0138-5

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  • DOI: https://doi.org/10.1007/s12274-011-0138-5

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