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Facile preparation of vanadium oxide thin films on sapphire(0001) by sol–gel method

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Abstract

Vanadium oxide (VOx) thin films were deposited onto sapphire by sol–gel method at various preparation conditions. The films with soaking time of 1 h present V2O3(006) preferred orientation. As the annealing temperature increasing from 430 to 580 °C, the ratio of the V2O3 compound in the obtained film increases, and the related crystallinity improves as well. However, the films with soaking time of 7 h show high-oriented VO2(020) structure instead of V2O3(006), showing clear grain structure and distinct phase transition property. Based on the process of thermal decomposition of predecessor, a reduction mechanism has been proposed to explain the current experimental results well.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (11175183, 21271007), Anhui Provincial Natural Science Foundation (1308085MF98) and Open Project of Building Energy Conservation Institute of Anhui Jianzhu University (K02592).

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Authors and Affiliations

  1. College of Mathematics and Physics, Anhui Jianzhu University, Hefei, 230022, China

    Y. X. Guo, Y. Q. Xu, X. L. Wang, J. Y. Yu, Z. Y. Yang, F. Zhang & R. Zhou

  2. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China

    C. W. Zou

  3. Center for Analysis and Measurement, Hefei University of Technology, Hefei, 230029, China

    Y. F. Liu

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  1. Y. X. Guo
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  2. C. W. Zou
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Correspondence to Y. F. Liu.

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Guo, Y.X., Zou, C.W., Liu, Y.F. et al. Facile preparation of vanadium oxide thin films on sapphire(0001) by sol–gel method. J Sol-Gel Sci Technol 70, 40–46 (2014). https://doi.org/10.1007/s10971-014-3271-2

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  • DOI: https://doi.org/10.1007/s10971-014-3271-2

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