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Investigation of nanostructured silicon as a candidate for heat sensitive material

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Abstract

Nanoscale pores are fabricated on the surface of silicon by simple metal-assisted etching process. The resistance of nanostructured silicon depends obviously on temperature. The temperature coefficient of resistance is −2.835 %/°C, which is as large as that of some heat sensitive materials, for instance vanadium oxide, amorphous silicon, used for uncooled infrared (IR) detectors. Considering with the enhanced near-IR absorption of nanostructured silicon, it is demonstrated that nanostructured silicon can be a promising heat sensitive material for uncooled IR detection. The sheet carrier concentration is slightly reduced, whereas carrier mobility is drastically decreased from 367.5 to 273.7 cm2 V−1 s−1 after nanostructuring process.

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Acknowledgments

This work was partially supported by the National Science Foundation of China under Grant No. 61101029.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, China

    Jing Jiang, Shibin Li, Zhanfei Xiao, Yuanjie Su, Zhiming Wu & Yadong Jiang

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  1. Jing Jiang
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  2. Shibin Li
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  3. Zhanfei Xiao
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  4. Yuanjie Su
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  5. Zhiming Wu
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  6. Yadong Jiang
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Correspondence to Jing Jiang.

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Jiang, J., Li, S., Xiao, Z. et al. Investigation of nanostructured silicon as a candidate for heat sensitive material. J Mater Sci: Mater Electron 24, 1770–1774 (2013). https://doi.org/10.1007/s10854-012-1010-4

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  • DOI: https://doi.org/10.1007/s10854-012-1010-4

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