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Numerical analysis of transmission coefficient, LDOS, and DOS in superlattice nanostructures of cubic \(\hbox {Al}_{x}\hbox {Ga}_{1-x}\hbox {N/GaN}\) resonant tunneling MODFETs

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Abstract

Numerical analysis of the transmission coefficient, local density of states, and density of states in superlattice nanostructures of cubic \(\hbox {Al}_{x}\hbox {Ga}_{1-x}\hbox {N/GaN}\) resonant tunneling modulation-doped field-effect transistors (MODFETs) using \(\hbox {next}{} \mathbf{nano}^{3}\) software and the contact block reduction method is presented. This method is a variant of non-equilibrium Green’s function formalism, which has been integrated into the \(\hbox {next}\mathbf{nano}^{3}\) software package. Using this formalism in order to model any quantum devices and estimate their charge profiles by computing transmission coefficient, local density of states (LDOS) and density of states (DOS). This formalism can also be used to describe the quantum transport limit in ballistic devices very efficiently. In particular, we investigated the influences of the aluminum mole fraction and the thickness and width of the cubic \(\hbox {Al}_{x}\hbox {Ga}_{1-x}\hbox {N}\) on the transmission coefficient. The results of this work show that, for narrow width of 5 nm and low Al mole fraction of \(x = 20\,\%\) of barrier layers, cubic \(\hbox {Al}_{x}\hbox {Ga}_{1-x}\hbox {N/GaN}\) superlattice nanostructures with very high density of states of 407 \(\hbox {eV}^{-1}\) at the resonance energy are preferred to achieve the maximum transmission coefficient. We also calculated the local density of states of superlattice nanostructures of cubic \(\hbox {Al}_{x}\hbox {Ga}_{1-x}\hbox {N/GaN}\) to resolve the apparent contradiction between the structure and manufacturability of new-generation resonant tunneling MODFET devices for terahertz and high-power applications.

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Acknowledgments

This work is the result of a joint collaboration between the groups of Physics and Technology of Optoelectronic Semiconductors at the University of Paderborn, Germany and the Laboratory of Materials, Applications and Environment at the University Mustapha Stambouli of Mascara, Algeria. T.W. and D.J.As. acknowledge financial support by the German Science Foundation (DFG).

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Authors and Affiliations

  1. Laboratory of Materials, Applications and Environment, Department of Technical Sciences, Faculty of Technology, University Mustapha Stambouli of Mascara, 29000, Mascara, Algeria

    D. Bouguenna & A. Beloufa

  2. Département de l’Électronique, Faculté de Génie Électrique, Université des Sciences et de la Technologie d’Oran Mohamed Boudiaf USTO-MB, BP 1505, El M’naouer, 31000, Oran, Algeria

    D. Bouguenna

  3. Department of Physics, University of Paderborn, 33098, Paderborn, Germany

    T. Wecker & D. J. As

  4. Laboratory of Modelization and Calculation Methods, Department of Electronic, University Dr Moulay Tahar of Saida, 20000, Saida, Algeria

    N. Kermas

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  1. D. Bouguenna
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  2. T. Wecker
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  3. D. J. As
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  4. N. Kermas
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Correspondence to D. Bouguenna.

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Bouguenna, D., Wecker, T., As, D.J. et al. Numerical analysis of transmission coefficient, LDOS, and DOS in superlattice nanostructures of cubic \(\hbox {Al}_{x}\hbox {Ga}_{1-x}\hbox {N/GaN}\) resonant tunneling MODFETs. J Comput Electron 15, 1269–1274 (2016). https://doi.org/10.1007/s10825-016-0892-4

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